生命周期: | Obsolete | 零件包装代码: | SIP |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.82 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 0.05 A |
集电极-发射极最大电压: | 150 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 130 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 1.2 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 70 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC1953Q | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 | |
2SC1953R | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 | |
2SC1953S | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 | |
2SC1953T | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 | |
2SC1955 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 17V V(BR)CEO | 800MA I(C) | TO-39 | |
2SC1959 | WINNERJOIN |
获取价格 |
Audio frequency power amplifier | |
2SC1959 | TOSHIBA |
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TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS) | |
2SC1959 | SECOS |
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NPN Plastic Encapsulated Transistor | |
2SC1959 | TGS |
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NPN EPITAXIAL PLANAR TRANSISTOR | |
2SC1959 | TRSYS |
获取价格 |
Plastic-Encapsulated Transistors |