Datasheet > 2SC1907

2SC1907

更新时间： 2024-11-17 14:54:39

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
4页	109K
描述
小信号晶体管

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2SC1907 数据手册

2SC1907

NPN Silicon Epitaxial Planar Transistor

for UHF TV Tuner and Local Oscillator.

On special request, these transistors can be

manufactured in different pin configurations.

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Emitter Current

-I_E

Power Dissipation

P_tot

300

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

h_FE

I_CBO

Min.

Typ.

Max.

Unit

DC Current Gain

µA

at V_CE= 10 V, I_C= 10 mA

Collector Base Cutoff Current

at V_CB= 10 V

Collector Base Breakdown voltage

at I_C= 10 µA

Collector Emitter Breakdown Voltage

at I_C= 3 mA

Emitter Base Breakdown Voltage

at I_E= 10 µA

Collector Emitter Saturation Voltage

at I_C= 20 mA, I_B= 4 mA

Transition Frequency

at V_CE= 10 V, I_C= 10 mA

Collector Output Capacitance

at V_CB= 10 V, f = 1 MHz

Base Time Constant

at V_CB= 10 V, I_C= 10 mA, f = 31.8 MHz

Oscillation Output Power

at V_CB= 10 V, I_C= 10 mA, f = 930 MHz

0.5

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

V_CE(sat)

f_T

0.2

1100

900

MHz

C_OB

r_{bb’ • Cc}

P_out

Dated : 18/08/2016 Rev：01

12 3 4

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