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2SC1675R PDF预览

2SC1675R

更新时间: 2024-11-20 14:46:19
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
1页 111K
描述
Transistor

2SC1675R 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SC1675R 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
TO – 92  
2SC1675 TRANSISTOR (NPN)  
1.EMITTER  
2.BASE  
FEATURES  
z
z
Low Collector Current  
General Purpose Switching and Amplification  
3.COLLECTOR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
50  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
30  
V
5
V
Collector Current  
50  
mA  
mW  
/W  
PC  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
625  
RθJA  
Tj  
200  
150  
Tstg  
Storage Temperature  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
50  
30  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= 10µA,IE=0  
IC=5mA,IB=0  
V
IE=10µA,IC=0  
V
VCB=50V,IE=0  
100  
100  
240  
0.3  
nA  
nA  
Emitter cut-off current  
IEBO  
VEB=5V,IC=0  
DC current gain  
hFE  
VCE=6V, IC=1mA  
IC=10mA,IB=1mA  
VCE=6V, IC=1mA  
VCB=6V,IE=0, f=1MHz  
VCE=6V,IC=1mA  
40  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE  
V
V
0.75  
2.5  
pF  
Collector output capacitance  
Transition frequency  
Cob  
fT  
150  
MHz  
CLASSIFICATION OF hFE  
RANK  
R
O
Y
RANGE  
40-80  
70-140  
120-240  
A,Dec,2010  

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