Datasheet > 2SC1675O

2SC1675O

更新时间： 2024-01-22 20:04:42

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	111K
描述
Transistor

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中文翻译

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数据手册

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2SC1675O 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TO – 92

2SC1675 TRANSISTOR (NPN)

1.EMITTER

2.BASE

FEATURES

Low Collector Current

General Purpose Switching and Amplification

3.COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

℃/W

℃

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

625

R_θJA

T_j

200

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 10µA,I_E=0

I_C=5mA,I_B=0

I_E=10µA,I_C=0

V_CB=50V,I_E=0

100

240

0.3

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=6V, I_C=1mA

I_C=10mA,I_B=1mA

V_CE=6V, I_C=1mA

V_CB=6V,I_E=0, f=1MHz

VCE=6V,IC=1mA

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

0.75

2.5

Collector output capacitance

Transition frequency

C_ob

f_T

150

MHz

CLASSIFICATION OF h_FE

RANK

RANGE

40-80

70-140

120-240

A,Dec,2010

中文翻译

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