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2SC1674 PDF预览

2SC1674

更新时间: 2024-10-31 22:45:07
品牌 Logo 应用领域
TRSYS 晶体晶体管
页数 文件大小 规格书
1页 109K
描述
TO-92 Plastic-Encapsulated Transistors

2SC1674 数据手册

  
Transys  
Electronics  
L
I M I T E D  
TO-92 Plastic-Encapsulated Transistors  
2SC1674  
TRANSISTOR (NPN)  
TO-92  
FEATURE  
Power dissipation  
1. EMITTER  
PCM  
:
0. 25 W (Tamb=25)  
2. COLLECTOR  
Collector current  
ICM  
Collector-base voltage  
V(BR)CBO  
3. BASE  
:
0.02  
30  
A
V
.
1 2 3  
:
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= 100µA , IE=0  
IC= 1 mA, IB=0  
IE= 100µA, IC=0  
VCB= 30V, IE=0  
VEB=3V , IC=0  
VCE=6 V, IC= 1mA  
IC=10 mA, IB= 1 mA  
VCE=6 V, IC= 1mA  
MIN  
30  
20  
4
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
0.1  
0.1  
µA  
µA  
Emitter cut-off current  
IEBO  
DC current gain  
hFE  
40  
180  
0.3  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE(ON)  
V
V
0.72  
Transition frequency  
Collector output capacitance  
Noise figure  
VCE=6 V, IC= 1mA  
400  
MHz  
pF  
dB  
f T  
VCE=6V, IE=0, f=1MHz  
1.5  
5
Cob  
NF  
GP  
VCE=6V, IC=1mA, f=100MHz,  
RS=50  
Power gain  
VCE=6V,IC=1mA,f=100MHz  
18  
dB  
CLASSIFICATION OF hFE(1)  
Rank  
Y
GR  
BL  
Range  
40-80  
60-120  
90-180  

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