2SC1623
GOOD-ARK Electronics
SOT-23 Plastic-Encapsulate Transistors
Features
Pb
●
High DC current gain: hFE=200(Typ),
VCE=6V,IC=1mA
RoHS
COMPLIANT
●
●
200 mW Power Dissipation of 200mW
High Stability and High Reliability
Marking:
SOT-23
According to hFE
Mechanical Data
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●
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SOT-23 Small Outline Plastic Package
Epoxy UL: 94V-0
Pin definition
Mounting Position: Any
Maximum Ratings & Electrical Characteristics(TA=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
V
V
VCBO
VCEO
VEBO
60
50
Collector-Base Voltage
Collector-Emitter Voltage
Emitter -Base Voltage
5
V
mA
mW
100
Collector Current-Continuous
Collector Power Dissipation
Operating junction temperature range
IC
PC
200
150
°C
°C
TJ
Storage temperature range
-55-+150
625
TSTG
RθJA
Thermal Resistance from Junction to Ambient
℃/W
Electrical Specifications(TA=25℃ unless otherwise noted)
Limits
Typ
Parameter
Symbol
Test Conditions
Unit
Min
60
Max
IC=100uA, IE=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
(BR)CBO
V(BR)CEO
IC=1mA, IB=0
V
50
5
IE=100uA, IC=0
V
(BR)EBO
ICBO
nA
nA
VCB=60V, IE=0
VEB=5V, IC=0
Collector cut-off current
Emitter cut-off current
100
100
600
IEBO
VCE=6V, IC=1mA
hFE(2)
90
200
250
DC current gain
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE(sat)
VBE(sat)
Collector-emitter saturation voltage
0.30
1.00
V
Base -emitter saturation voltage
Transition frequency
VCE=6V,
IC=10mA,f=30MHz
MHz
fT
Classlslcatlon OF hFE(1)
L4
90-180
L4
L5
L6
L7
300-600
L7
RANK
135-270
L5
200-400
L6
RANGE
Marking
Doc.No.643141
www.goodark.com
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