2SC1623
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups, O, Y,
G and L, according to its DC current gain
On special request, these transistors can be
manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
60
V
V
50
5
100
V
Collector Current
mA
mW
Power Dissipation
Ptot
200
O
Junction Temperature
Storage Temperature Range
Tj
150
C
O
C
Tstg
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 6 V, IC = 1 mA
Current Gain Group
R
O
Y
hFE
hFE
hFE
hFE
90
-
-
-
-
180
270
400
600
-
-
-
-
135
200
300
G
Collector Base Cutoff Current
at VCB = 60 V
Emitter Base Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 10 mA
ICBO
IEBO
-
-
-
0.1
µA
µA
V
-
0.1
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
fT
60
50
5
-
-
-
-
-
V
Emitter Base Breakdown Voltage
at IE = 10 µA
-
-
V
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 10 mA
Base Emitter Saturation Voltage
at IC = 100 mA, IB = 10 mA
Gain Bandwidth Product
at VCE = 6 V, IC = 10 mA
Output Capacitance
0.15
0.86
250
3
0.3
1
-
V
-
V
-
MHz
pF
Cob
-
-
at VCB = 6 V, f = 1 MHz
®
Dated : 18/08/2016 Rev: 01