Datasheet > 2SC1623

2SC1623

更新时间： 2024-11-24 12:32:43

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管放大器
页数	文件大小	规格书
4页	255K
描述
High DC Current Gain: hFE = 200 TYP. VCE= 6.0 V, IC= 1.0 mA

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2SC1623 数据手册

Product specification

2SC1623

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High DC Current Gain:

h^FE= 200 TYP.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

V^CE= 6.0 V, I^C= 1.0 mA

High Voltage:

V^{CE O}= 50 V

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

100

Collector power dissipation

Junction temperature

200

T^j

150

Storage temperature range

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VCB = 60V, IE=0

Min

Typ

Max

0.1

600

0.3

Unit

Collector cutoff current

Emitter cutoff current

ICBO

IEBO

hFE

VEB = 5V, IC=0

DC current gain *

VCE = 6V , IC = 1mA

200

0.15

0.86

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter voltage *

VCE(sat) IC = 100mA , IB = 10mA

VBE(sat) IC = 100mA , IB = 10mA

VBE

Cob

VCE = 6V , IC = 1mA

0.55 0.62 0.65

Output capacitance

VCB = 6V , IE = 0 , f = 1.0MHz

VCE = 6V , IE = -10mA

3.0

MHz

Transiton Frequency

250

*. PW 350ìs,duty cycle 2%

h^FEClassification

Marking

hFE

200 to 400

90 to 180

135 to 270

300 to 600

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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