Datasheet > 2SC1623

2SC1623

更新时间： 2024-09-28 06:17:27

品牌	Logo	应用领域
SECOS		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	149K
描述
NPN Epitaxial Planar Transistor

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2SC1623 数据手册

2SC1623

150 mA, 60 V

NPN Epitaxial Planar Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

DESCRIPTION

The 2SC1623 is designed for use driver stage of AF amplifier and general purpose application.

PACKAGE DIMENSIONS

SC-59

Dim

Min

2.70

1.30

1.00

0.35

Max

3.10

1.70

1.30

0.50

Top View

1.90 REF.

0.00

0.10

0.20

1.25

2.25

0.10

0.26

0.60

1.65

3.00

COLLECTOR

BASE

All Dimension in mm

EMITTER

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Currrent

150

250

℃

Total Power Dissipation

Junction, Storage Temperature

T_J, T_STG

+150, -55 ~ +150

CHARACTERISTICS at Ta = 25°C

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

IC=100uA

IC=1mA

BVCEO

BVEBO

ICBO

IE=10uA

VCB=60V

VEB=5V

100

250

1.0

600

IEBO

*VCE(sat)

*VBE(sat)1

*hFE1

*hFE2

IC=100mA, IB=10mA

VCE=6V, IC=1mA

VCE=6V, IC=150mA

VCE=1V, IC=10mA

*hFE3

MHz

VCE=10V, IC=1mA, f=100MHz

VCB=10V, f=1MHz, IE=0A

Cob

3.5

* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%

CLASSIFICATION OF h_FE1

Rank

Range

90 - 180

135 - 270

200 - 400

300 - 600

01-June-2002 Rev. A

Page 1 of 2

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