Datasheet > 2SC1444

2SC1444

更新时间： 2024-09-26 06:18:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	128K
描述
Silicon NPN Power Transistors

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2SC1444 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC1444

DESCRIPTION

·With TO-66 package

·Excellent safe operating area

·Low collector saturation voltage

APPLICATIONS

·For switching and wide-band

amplifier applications.

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-66) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

UNIT

Open emitter

Open base

Open collector

I_B

Base current

P_D

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

T_stg

-55~150

12 3

中文翻译

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