Datasheet > 2SC1391

2SC1391

更新时间： 2024-09-23 05:56:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	128K
描述
Silicon NPN Power Transistors

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中文翻译

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2SC1391 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC1391

DESCRIPTION

·With TO-66 package

·High collector-emitter voltage

: V_CEO=300V

APPLICATIONS

·For use in line-operated color TV chroma

output circuits and sound output circuits.

PINNING

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-66) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

300

UNIT

Open emitter

Open base

300

Open collector

0.1

P_T

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

6.5

℃

T_j

150

T_stg

-55~150

12 3

中文翻译

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与2SC1391相关器件

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2SC1394K	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic
2SC1394L	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic
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2SC1394O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 20MA I(C) \| TO-92