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2SC1358 PDF预览

2SC1358

更新时间: 2024-11-13 07:30:27
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页数 文件大小 规格书
3页 109K
描述
Silicon NPN Power Transistors

2SC1358 数据手册

 浏览型号2SC1358的Datasheet PDF文件第2页浏览型号2SC1358的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC1358  
DESCRIPTION  
·With TO-3 package  
·High breakdown voltage  
·High speed switching  
APPLICATIONS  
·Designed for use in large screen color  
deflection circuits  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
1400  
500  
6
UNIT  
V
Open base  
V
Open collector  
V
4.5  
A
ICM  
Collector current-peak  
Base current  
10  
A
IB  
1.5  
A
PT  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
50  
W
Tj  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-C  
Thermal resistance from junction to case  
2.5  
/W  

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