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2SC1213 PDF预览

2SC1213

更新时间: 2024-11-20 14:53:59
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
1页 20K
描述
小信号晶体管

2SC1213 数据手册

  
2SC1213 / 2SC1213A  
NPN Silicon Epitaxial Planar Transistor  
Low frequency amplifier applications.  
The transistor is subdivided into three groups, B,  
C and D, according to its DC current gain. As  
complementary type the PNP transistor 2SA673  
and 2SA673A are recommended.  
On special request, these transistors can be  
manufactured in different pin configurations.  
1. Emitter 2. Collector 3. Base  
TO-92 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
VCBO  
Value  
Unit  
V
Collector Base Voltage  
2SC1213  
2SC1213A  
2SC1213  
2SC1213A  
35  
50  
35  
50  
Collector Emitter Voltage  
V
VCEO  
Emitter Base Voltage  
Collector Current  
VEBO  
IC  
4
500  
V
mA  
mW  
Power Dissipation  
Ptot  
Tj  
400  
O
C
Junction Temperature  
Storage Temperature Range  
150  
O
C
Tstg  
- 55 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at VCE = 3 V, IC = 10 mA  
Current Gain Group  
B
C
D
hFE  
hFE  
hFE  
hFE  
60  
100  
160  
10  
-
-
-
-
120  
200  
320  
-
-
-
-
-
at VCE = 3 V, IC = 500 mA  
Collector Base Cutoff Current  
at VCB = 20 V  
Collector Base Breakdown Voltage  
at IC = 10 µA  
Collector Emitter Breakdown Voltage  
at IC = 1 mA  
Emitter Base Breakdown Voltage  
at IE = 10 µA  
ICBO  
-
-
0.5  
µA  
V
35  
50  
35  
50  
-
-
-
-
-
-
-
-
2SC1213  
2SC1213A  
2SC1213  
2SC1213A  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
VCE(sat)  
VBE  
V
4
-
-
-
-
0.6  
-
V
Collector Emitter Saturation Voltage  
at IC = 150 mA, IB = 15 mA  
Base Emitter Voltage  
V
-
0.64  
V
at VCE = 3 V, IC = 10 mA  
®
Dated : 18/08/2016 Rev: 01  

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