2SC1213

更新时间： 2024-11-19 04:25:55

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
1页	66K
描述
Plastic-Encapsulated Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC1213 数据手册

Transys

Electronics

I M I T E D

TO-92 Plastic-Encapsulated Transistors

2SC1213

TRANSISTOR (NPN)

TO-92

2SC1213A

FEATURE

1. EMITTER

Power dissipation

2. COLLECTOR

P_CM:

0.4

0.5

W (Tamb=25℃)

3. BASE

Collector current

I_CM:

1 2 3

Collector-base voltage

V_(BR)CBO

2SC1213 :

2SC1213A :

Operating and storage junction temperature range

T_J, T_stg:

-55℃ to +150℃

ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage 2SC1213

2SC1213A

V(BR)_CBO

Ic= 10µA , I_E=0

Collector-emitter breakdown voltage 2SC1213

2SC1213A

V(BR)_CEO

I_C= 1 mA , I_B=0

V(BR)_EBO

I_CBO

Emitter-base breakdown voltage

Collector cut-off current

I_E=10µA, I_C=0

V_CB= 20V , I_E=0

V_CE=3V, I_C= 10mA

V_CE=3V, I_C= 500mA

0.5

µA

h_FE(1)

320

DC current gain

h_FE(2)

V_CE(sat)

V_BE

I_C= 150mA, I_B= 15 mA

V_CE= 3V, I_C= 10 mA

0.2

0.6

Collector-emitter saturation voltage

Base-emitter voltage

0.75

CLASSIFICATION OF h_FE(1)

Rank

60-120

100-200

160-320

Range

中文翻译

下载PDF

与2SC1213相关器件

型号	品牌	获取价格	描述	数据表
2SC1213_11	SECOS	获取价格	General Purpose Transistor
2SC1213\|2SC1213A	ETC	获取价格
2SC1213A	HITACHI	获取价格	Silicon NPN Epitaxial
2SC1213A	MICRO-ELECTRONICS	获取价格	SILICON TRANSISTOR
2SC1213A	SECOS	获取价格	NPN Silicon General Purpose Transistor
2SC1213A	TRSYS	获取价格	Plastic-Encapsulated Transistors
2SC1213A	RENESAS	获取价格	Silicon NPN Epitaxial
2SC1213A	WINNERJOIN	获取价格	TRANSISTOR (NPN)
2SC1213A	MCC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC1213A	CJ	获取价格	TO-92