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2SC1212A PDF预览

2SC1212A

更新时间: 2024-11-18 22:45:07
品牌 Logo 应用领域
日立 - HITACHI /
页数 文件大小 规格书
5页 32K
描述
Silicon NPN Epitaxial

2SC1212A 数据手册

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2SC1212, 2SC1212A  
Silicon NPN Epitaxial  
Application  
Low frequency power amplifier  
Outline  
TO-126 MOD  
1. Emitter  
2. Collector  
3. Base  
1
2
3
Absolute Maximum Ratings (Ta = 25°C)  
Ratings  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
2SC1212  
2SC1212A  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
50  
80  
50  
80  
V
4
4
V
1
1
A
Collector power dissipation  
PC  
PC*1  
0.75  
0.75  
W
W
°C  
°C  
8
8
Junction temperature  
Tj  
150  
150  
Storage temperature  
Tstg  
–55 to +150  
–55 to +150  
Note: 1. Value at TC = 25°C  

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