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2SC1170A PDF预览

2SC1170A

更新时间: 2024-11-02 05:56:27
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
3页 130K
描述
Silicon NPN Power Transistors

2SC1170A 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:NBase Number Matches:1

2SC1170A 数据手册

 浏览型号2SC1170A的Datasheet PDF文件第2页浏览型号2SC1170A的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC1170A  
DESCRIPTION  
·With TO-3 package  
·High voltage ,high speed  
APPLICATIONS  
·Designed for use in large screen color  
deflection circuits  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
1400  
500  
UNIT  
V
Open base  
V
Open collector  
6
V
3.5  
A
IB  
Base current  
1.0  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
50  
W
Tj  
150  
Tstg  
-55~150  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-C  
Thermal resistance junction case  
2.5  
/W  

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