Datasheet > 2SC0560U

2SC0560U

更新时间： 2023-12-06 20:09:22

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	819K
描述
功率三极管

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2SC0560U 数据手册

2SC0560U

NPN Silicon Epitaxial Planar Power Transistor

Features

• Low saturation voltage

• Excellent DC current gain characteristics

Absolute Maximum Ratings (T_a= 25

)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector Current

Peak Collector Current, Pulsed

Collector Power Dissipation

Junction Temperature

I_CM

P_tot

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

125

Unit

Thermal Resistance from Junction Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 5

Dated: 12/07/2023 Rev:02

12 3 4 5

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