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2SB962-Z-R PDF预览

2SB962-Z-R

更新时间: 2024-02-19 02:22:23
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描述
PNP Transistors

2SB962-Z-R 数据手册

 浏览型号2SB962-Z-R的Datasheet PDF文件第2页浏览型号2SB962-Z-R的Datasheet PDF文件第3页 
SMD Type  
Transistors  
PNP Transistors  
2SB962-Z  
TO-252  
Unit: mm  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
0.50  
Features  
Low collector to emitter saturation voltage VCE(sat).  
0.127  
max  
+0.1  
-0.1  
0.80  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
4.60  
+0.15  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
-40  
-30  
-5  
V
Collector Current - Continuous  
Collector current -Pulse  
I
C
-3  
A
I
CP  
-6  
Collector Power Dissipation  
Junction Temperature  
(Note.1)  
P
C
2
W
T
J
150  
Storage Temperature range  
T
stg  
-55 to 150  
Note.1: PW 10ms,Duty Cycle 50℅  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
-40  
-30  
-5  
Typ  
Max  
Unit  
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
V
V
V
CBO  
CEO  
EBO  
Ic= -100 μAI  
Ic= -1 mAI =0  
= -100μAI =0  
CB= -30V , I =0  
EB= -4V , I =0  
=-2 A, I =-200mA (Note.1)  
BE(sat) IC=-2 A, IB=-200mA (Note.1)  
E=0  
V
B
I
E
C
I
CBO  
EBO  
V
V
E
-10  
-1  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
I
C
B
-0.3  
-1  
-0.5  
-2  
V
h
FE(1)  
V
CE= -2V, I  
CE= -2V, I  
CB = –10V, I  
CE= -5V, I = 100mA  
C
= -20mA (Note.1)  
= -1 A (Note.1)  
= 0, f = 1MHz  
30  
60  
150  
160  
55  
DC current gain  
hFE(2)  
V
C
400  
Collector output capacitance  
Transition frequency  
C
ob  
V
V
E
pF  
f
T
E
80  
MHz  
Note.1: Pulsed: PW 350us,Duty Cycle2℅  
Classification of hfe(2)  
Type  
2SB962-Z-R  
60-120  
2SB962-Z-Q  
100-200  
2SB962-Z-P  
160-320  
2SB962-Z-E  
200-400  
Range  
1
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