2SB937ATX

更新时间： 2024-02-27 21:38:25

品牌	Logo	应用领域
松下 - PANASONIC		晶体开关晶体管功率双极晶体管
页数	文件大小	规格书
2页	67K
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中文翻译

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数据手册

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2SB937ATX 数据手册

Power Transistors

2SB937, 2SB937A

Silicon PNP epitaxial planar type Darlington

For power amplification and switching

Unit: mm

3.4±0.3

8.5±0.2

6.0±0.5

1.0±0.1

Complementary to 2SD1260 and 2SD1260A

Features

High foward current transfer ratio h_FE

■

●

1.5max.

1.1max.

0.5max.

●

High-speed switching

N type package enabling direct soldering of the radiating fin to

●

0.8±0.1

the printed circuit board, etc. of small electronic equipment.

2.54±0.3

5.08±0.5

Absolute Maximum Ratings (T =25˚C)

■

1:Base

2:Collector

3:Emitter

N Type Package

Parameter

Symbol

Ratings

Unit

Collector to

2SB937

2SB937A

2SB937

–60

V_CBO

base voltage

Collector to

–80

Unit: mm

8.5±0.2

6.0±0.3

3.4±0.3

–60

1.0±0.1

V_CEO

emitter voltage 2SB937A

Emitter to base voltage

Peak collector current

Collector current

–80

V_EBO

I_CP

–5

–4

I_C

–2

R0.5

0.8±0.1

0 to 0.4

Collector power T_C=25°C

2.54±0.3

1.1 max.

P_C

5.08±0.5

dissipation

Ta=25°C

1.3

Junction temperature

Storage temperature

T_j

150

˚C

1:Base

2:Collector

3:Emitter

T_stg

–55 to +150

N Type Package (DS)

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

I_CBO

Conditions

min

typ

max

–1

Unit

2SB937

V_CB= –60V, I_E= 0

current

2SB937A

2SB937

V_CB= –80V, I_E= 0

V_CE= –30V, I_B= 0

V_CE= –40V, I_B= 0

V_EB= –5V, I_C= 0

–1

Collector cutoff

current

–2

I_CEO

I_EBO

V_CEO

h_FE1

2SB937A

–2

Emitter cutoff current

–2

Collector to emitter 2SB937

voltage 2SB937A

–60

–80

I_C= –30mA, I_B= 0

V_CE= –4V, I_C= –1A

1000

2000

Forward current transfer ratio

Base to emitter voltage

h_FE2

_CE= –4V, I_C= –2A

10000

–2.8

V_BE

V_CE= –4V, I_C= –2A

I_C= –2A, I_B= –8mA

Collector to emitter saturation voltage V_CE(sat)

–2.5

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

_CE= –10V, I_C= – 0.5A, f = 1MHz

0.4

1.5

0.5

MHz

µs

I_C= –2A, I_B1= –8mA, I_B2= 8mA

µs

^*h_FE2Rank classification

Internal Connection

Rank

h_FE2

2000 to 5000 4000 to 10000

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与2SB937ATX相关器件

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2SB937R	PANASONIC	获取价格	Si PNP EPITAXIAL PLANAR
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2SB938	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
2SB938A	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
2SB938AH	PANASONIC	获取价格	暂无描述
2SB938AP	PANASONIC	获取价格	Si PNP EPITAXIAL PLANAR
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