Datasheet > 2SB931

2SB931

更新时间： 2024-11-17 12:53:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关
页数	文件大小	规格书
1页	62K
描述
Low collector-emitter saturation voltage VCE(sat). Large collector current IC.

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2SB931 数据手册

Product specification

2SB931

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

Features

-0.2

Low collector-emitter saturation voltage V^CE(sat).

Satisfactory linearity of forward current transfer ratio h^FE.

Large collector current I^C.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

VCEO

V^EBO

I^C

-130

Collector-emitter voltage

Emitter-base voltage

Collector current

-80

-7

-3

-6

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

P^C

1.3

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CEO

I^CBO

Testconditons

Min

Typ

Max

Unit

Collector-emitter voltage

Collector-base cutoff curent

Emitter-base cutoff current

I^C= -10mA, I^B= 0

-80

V^CB= -100 V,I^E= 0

V^EB= -5 V, I^C= 0

-10

-50

260

ìA

I^EBO

V^CE= -2 V, I^C= -0.5 A

V^CE= -2 V, I^C= -0.1 A

Forward current transfer ratio

h^FE

Base-emitter saturation voltage

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V^BE(sat)I^C= -2 A, I^B= -0.1 A

V^CE(sat)I^C= -2 A, I^B= -0.1 A

-1.5

-0.5

f^T

t^on

t^stg

t^f

V^CE= -10 V, I^C= -0.5 A , f = 10 MHz

0.3

1.1

0.3

MHz

ìs

I^C= -0.5 A,I^B1= -50 mA,I^B2= 50 mA,

V^CC= -50 V

Storage time

ìs

Fall time

ìs

hFE Classification

Rank

hFE

90 180

130 260

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2SB932	TYSEMI	获取价格	Low collector-emitter saturation voltage VCE(sat). Large collector current IC.