Datasheet > 2SB930-P

2SB930-P

更新时间： 2024-12-01 01:12:11

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科信 - KEXIN		/
页数	文件大小	规格书
2页	1157K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB930-P 数据手册

SMD Type

Transistors

PNP Transistors

2SB930

TO-252

Unit: mm

■ Features

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

● High forward current transfer ratio hFE

which has satisfactory linearity

● Low collector to emitter saturation voltage V^CE(sat)

● Complementary to 2SD1253

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-60

-5

Collector Current - Continuous

Collector current - Pulse

-4

-8

Collector Power Dissipation

Tc = 25°C

Ta = 25°C

℃

1.3

150

Junction Temperature

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector cutoff current

VCBO

VCEO

VEBO

-60

-5

Ic= -100 μA， I

Ic= -30 mA， I

= -100μA， I

CB= -60V , I =0

CE= -60V ,VBE=0

^CE= -30V ,I =0

^EB= -5V , I =0

CBO

CES

-0.1

-400

-700

-0.1

-1.5

-1.2

- 2

Collector cutoff current

CEO

EBO

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-4 A, I

=-400mA

=-4 A, I

CE= -4 V, I

^CE= -4 V, I

C= -3 A

C= -1 A

C= -3 A

FE(1)

FE(2)

250

DC current gain

Turn-on time

Storage time

Fall time

0.2

0.5

0.2

= –4A, IB1 = – 0.4A, IB2 = 0.4A

stg

Transition frequency

CE= -10V, I

C= -100mA,f=1MHz

MHz

■ Classification of hfe(1)

Type

2SB930-Q

70-150

2SB930-P

120-250

Range

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