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2SB925 PDF预览

2SB925

更新时间: 2024-11-23 06:20:35
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 234K
描述
Silicon PNP Power Transistor

2SB925 数据手册

 浏览型号2SB925的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
2SB925  
DESCRIPTION  
·High Collector Current:: IC= -7A  
·Low Collector Saturation Voltage  
: VCE(sat)= -0.6V(Max)@IC= -5A  
·High Speed Switching  
APPLICATIONS  
·Designed for low voltage switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-40  
UNIT  
V
-20  
V
-5  
V
Collector Current-Continuous  
Collector Current-Peak  
-7  
A
ICM  
-12  
A
Total Power Dissipation  
@ TC=25℃  
PC  
30  
W
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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