Datasheet > 2SB9110U

2SB9110U

更新时间： 2024-11-23 14:53:59

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	314K
描述
小信号晶体管

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2SB9110U 数据手册

2SB9110U

PNP Silicon Epitaxial Planar Power Transistor

Features

• Low Collector-Emitter Saturation Voltage

• High Collector Current Capability

• Higher Efficiency Leading to Less Heat Generation

Applications

• DC to DC Conversion

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

120

100

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulsed

-I_CM

0.55 ¹⁾

Power Dissipation

P_tot

1.4 ²⁾

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

227 ¹⁾

Thermal Resistance from Junction to Ambient

℃/W

89 ²⁾

Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 5

Dated: 13/06/2023 Rev: 03

12 3 4 5

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