生命周期: | Transferred | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.31 |
最大集电极电流 (IC): | 12 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 功耗环境最大值: | 35 W |
最大功率耗散 (Abs): | 35 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 120 MHz | VCEsat-Max: | 0.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB903_15 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB903_2014 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB903Q | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 12A I(C) | TO-220AB | |
2SB903R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 12A I(C) | TO-220AB | |
2SB903S | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 12A I(C) | TO-220AB | |
2SB904 | ISC |
获取价格 |
Silicon PNP Power Transistors | |
2SB904 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB904 | SANYO |
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30V/20A High-Speed Switching Applications | |
2SB904Q | ETC |
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TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 20A I(C) | TO-247VAR | |
2SB904R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 20A I(C) | TO-247VAR |