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2SB903 PDF预览

2SB903

更新时间: 2024-11-22 06:19:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
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4页 179K
描述
Silicon PNP Power Transistors

2SB903 数据手册

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Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB903  
DESCRIPTION  
·With TO-220 package  
·Low collector saturation voltage  
·Large current capacity.  
·Complement to type 2SD1212  
APPLICATIONS  
·Suitable for relay drivers, high-speed  
inverters,converters, and other genral  
large current switching applications.  
·High-speed switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-220) and symbol  
3
Base  
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base votage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
-60  
UNIT  
Open emitter  
Open base  
V
V
V
A
A
-30  
Open collector  
-6  
-12  
ICM  
Collector current-peak  
-20  
1.75  
35  
PC  
Collector power dissipation  
W
TC=25  
Tj  
Junction temperature  
Storage temperature  
150  
Tstg  
-55~150  

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