Datasheet > 2SB900

2SB900

更新时间： 2024-11-22 06:25:59

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	87K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB900 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB900

DESCRIPTION

·With TO-220C package

·Low collector saturation voltage

·Wide area of safe operation

APPLICATIONS

·For power amplifier and switching

applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220) and symbol

Base

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector dissipation

Junction temperature

Storage temperature

CONDITIONS

VALUE

-50

UNIT

Open emitter

Open base

-50

Open collector

-5

-4

P_C

T_C=25ꢀ

ꢀ

T_j

150

-50~150

T_stg

ꢀ

12 3

中文翻译

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