Datasheet > 2SB869

2SB869

更新时间： 2024-02-23 10:12:09

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	124K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB869 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB869

DESCRIPTION

·With TO-220C package

·Complement to type 2SD961

·Low collector saturation voltage

·High collector current capability

APPLICATIONS

·For power switching applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220) and symbol

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Collector dissipation

Junction temperature

Storage temperature

CONDITIONS

VALUE

-130

-80

UNIT

Open emitter

Open base

Open collector

-7

-5

I_CM

-10

P_C

T_C=25℃

℃

T_j

150

T_stg

-50~150

12 3

中文翻译

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