Datasheet > 2SB812

2SB812

更新时间： 2024-11-26 07:30:19

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	133K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB812 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB812

DESCRIPTION

·With TO-3PN package

·Wide area of safe operation

·Low collector saturation voltage

APPLICATIONS

·For audio frequency output applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Tc=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector power dissipation

Junction temperature

Storage temperature

CONDITIONS

VALUE

-60

UNIT

Open emitter

Open base

-60

Open collector

-6

-4

P_C

T_C=25ꢀ

ꢀ

T_j

150

-40~150

T_stg

ꢀ

12 3

中文翻译

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