Datasheet > 2SB804-W-HF

2SB804-W-HF

更新时间： 2024-11-22 01:08:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1258K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB804-W-HF 数据手册

SMD Type

Transistors

PNP Transistors

2SB804-HF

■ Features

1.70 0.1

● World standard miniature package: SOT-89

● High collector to base voltage:V^CBO＞-100V

● Excell DC Current gain linearity.

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

VCBO

Rating

-100

-80

Unit

Collector - Emitter Voltage

Emitter - Base Voltage

V^CEO

V^EBO

-5

Collector Current - Continuous

-1.0

-1.5

2.0

I^C

Collector Current -Pulse

Collector Power Dissipation

Junction Temperature

P^C

℃

150

Storage Temperature range

* PW≤10 ms,duty cycle ≤50%

T^stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， IE=0

Min

-100

-80

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector cutoff current

V^CBO

V^CEO

V^EBO

I^CBO

Ic= -1 mA， IB=0

IE= -100μA， IC=0

V^CB= -100V， I^E=0

V^EB= -5V， I^C=0

-100

-0.5

-1.5

-700

400

Emitter cutoff current

I^EBO

Collector-emitter saturation voltage *1

V^CE(sat)IC=-500 mA, IB=-50mA

VBE(sat) IC= -500 mA, IB=- 50mA

Base - emitter saturation voltage

Base - emitter voltage

V^BE

h^FE(1)

h^FE(2)

C^ob

VCE= -10V, IC= -10mA

VCE= -2.0V, IC= -100mA

V^CE=- 2.0V, I^C= -500mA

VCE= -5.0V, IE= 0

-600

200

DC current gain

Collector output capacitance

Transition frequency

f^T

VCE= -10V, IE= 0,f=1MHz

MHz

*1 Pulsed:PW≤350us,duty cycle ≤2%

■ Classification of hfe(1)

Type

Range

Marking

2SB804-W-HF

90-180

2SB804-V-HF

135-270

2SB804-U-HF

200-400

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