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2SB794_2014 PDF预览

2SB794_2014

更新时间: 2024-11-29 01:23:39
品牌 Logo 应用领域
锦美电子 - JMNIC /
页数 文件大小 规格书
3页 169K
描述
Silicon PNP Power Transistors

2SB794_2014 数据手册

 浏览型号2SB794_2014的Datasheet PDF文件第2页浏览型号2SB794_2014的Datasheet PDF文件第3页 
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB794 2SB795  
DESCRIPTION  
·With TO-126 package  
·DARLINGTON  
·High DC current gain  
·Low collector saturation voltage  
·Complement to type 2SD985 2SD986  
APPLICATIONS  
·For use in operating from IC without  
predriver ,such as hammer driver  
PINNING(See Fig.2)  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-60  
UNIT  
2SB794  
2SB795  
2SB794  
2SB795  
VCBO  
Collector-base voltage  
Open emitter  
V
-80  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
VEBO  
IC  
Emitter-base voltage  
Collector current (DC)  
Collector current-peak  
Open collector  
-8  
V
A
A
-1.5  
-3.0  
1.0  
ICM  
Ta=25  
TC=25℃  
PD  
Total power dissipation  
W
10  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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