Datasheet > 2SB792-S

2SB792-S

更新时间： 2024-11-26 01:08:43

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页数	文件大小	规格书
2页	962K
描述
PNP Transistors

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中文翻译

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数据手册

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2SB792-S 数据手册

SMD Type

Transistors

PNP Transistors

2SB792

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High collector to emitter voltage VCEO

● Low noise voltage NV

+0.02

-0.02

+0.1

-0.1

0.15

0.95

● Complimentary to 2SD814.

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-150

-5

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-50

℃

-100

200

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I =0

CB= -100 V , I =0

Min

-150

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

-1

EB= -4V , I

=-30mA, I

C=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-3mA

-1

=-30mA, I

^CE= -5V, I

^CE= –10V, I

=-3mA

-1.2

450

hFE

= -10mA

= –1mA, G

= 100kΩ , Function = FLAT

130

V =80dB,

Noise voltage

150

Collector output capacitance

Transition frequency

^CB= -10V, I

CE= -10V, I

= 0,f=1MHz

= 10mA,f=200MHz

200

MHz

■ Classification of hfe

Type

Range

Marking

2SB792-R

130-220

2SB792-S

185-330

2SB792-T

260-450

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