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2SB776 PDF预览

2SB776

更新时间: 2023-12-06 20:10:29
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
3页 260K
描述
TO-126

2SB776 数据手册

 浏览型号2SB776的Datasheet PDF文件第2页浏览型号2SB776的Datasheet PDF文件第3页 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-126 Plastic-Encapsulate Transistors  
2SB776 TRANSISTOR (PNP)  
TO-126  
FEATURES  
z
High Current Output Up to 3A  
Low Saturation Voltage Power Dissipation  
1. EMITTER  
2. COLLECTOR  
3. BASE  
z
ꢀꢁꢂꢃꢄꢅꢆ  
Equivalent Circuit  
B776,!ꢀ-ꢁꢂꢀꢃꢂo.ꢀꢃ  
Solid dot= Green molding compound  
device, if none, the normal device  
//,ode  
B776  
XX  
ORDERING INFORMATION  
Part Number  
Package  
TO-126  
TO-126  
Packing Method  
Pack Quantity  
2SB776  
Bulk  
200pcs/Bag  
60pcs/Tube  
2SB776-TU  
Tube  
MAXIMUM RATINGS (Ta=25unless otherwise noted )  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
-50  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
-50  
V
Emitter-Base Voltage  
-5  
V
Collector Current –Continuous  
Collector Power Dissipation  
Operation Junction and Storage Temperature Range  
-3  
A
PC  
1
W
TJ,Tstg  
-55-150  
www.jscj-elec.com  
1
Rev. - 2.0  

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