2SB772ZPT

更新时间： 2024-09-29 06:17:31

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
4页	129K
描述
PNP Epitaxial Transistor

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中文翻译

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2SB772ZPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

2SB772ZPT

SMALL FLAT

PNP Epitaxial Transistor

VOLTAGE 30 Volts CURRENT 3 Ampere

APPLICATION

* Power driver and Dc to DC convertor .

FEATURE

* Small flat package. (SC-73/SOT-223)

SC-73/SOT-223

* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A)

* High speed switching time: tstg= 1.0uSec (typ.)

* PC= 1.5 W (mounted on ceramic substrate).

* High saturation current capability.

1.65+0.15

6.50+0.20

3.00+0.10

0.90+0.05

2.0+0.3

CONSTRUCTION

* PNP Switching Transistor

0.9+0.2

0.70+0.10

0.27+0.05

0.01~0.10

0.70+0.10

2.30+0.1

0.70+0.10

4.60+0.1

1 Base

2 Emitter

3 Collector ( Heat Sink )

(3)

(2)

CIRCUIT

(1)

Dimensions in millimeters

SC-73/SOT-223

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

CONDITION

Open Emitter

SYMBOL

VCBO

MIN.

MAX.

-40

UNITS

Volts

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current DC

Open Base

VCEO

VEBO

-30

-5

Volts

Amps

^oC

Open Collector

-3

Peak Collector Current

Peak Base Current

ICM

-3

IBM

-0.5

1500

+150

Total Power Dissipation

Storage Temperature

Junction Temperature

Operating Ambient Temperature

TA ≤ 25^OC; Note 1

PTOT

TSTG

-55

^oC

TAMB

-55

^oC

Note

1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.

2. Measured at Pulse Width 300 us, Duty Cycle 2%.

2004-8

12 3 4

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