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2SB772PGP PDF预览

2SB772PGP

更新时间: 2024-11-05 13:04:11
品牌 Logo 应用领域
力勤 - CHENMKO 晶体晶体管
页数 文件大小 规格书
4页 115K
描述
暂无描述

2SB772PGP 数据手册

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CHENMKO ENTERPRISE CO.,LTD  
2SB772PT  
SMALL FLAT  
PNP Epitaxial Transistor  
VOLTAGE 30 Volts CURRENT 3 Ampere  
APPLICATION  
* Power driver and Dc to DC convertor .  
FEATURE  
* Small flat package. (SC-62/SOT-89)  
SC-62/SOT-89  
* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A)  
* High speed switching time: tstg= 1.0uSec (typ.)  
* PC= 1.5 W (mounted on ceramic substrate).  
* High saturation current capability.  
4.6MAX.  
1.7MAX.  
1.6MAX.  
0.4+0.05  
CONSTRUCTION  
* PNP Switching Transistor  
MARKING  
* hFE Classification Q: Q72  
P: 772  
+0.08  
0.45-0.05  
+0.08  
+0.08  
0.40-0.05  
0.40-0.05  
1.50+0.1  
1.50+0.1  
E: E72  
1
2
3
1 Base  
2 Collector ( Heat Sink )  
3 Emitter  
CIRCUIT  
1
B
2
C
3
E
Dimensions in millimeters  
SC-62/SOT-89  
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )  
RATINGS  
CONDITION  
Open Emitter  
SYMBOL  
VCBO  
MIN.  
-
MAX.  
-40  
UNITS  
Volts  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current DC  
Open Base  
VCEO  
VEBO  
IC  
-
-30  
-5  
Volts  
Volts  
Amps  
Amps  
Amps  
mW  
oC  
Open Collector  
-
-
-3  
Peak Collector Current  
Peak Base Current  
ICM  
-
-
-3  
IBM  
-0.5  
1500  
+150  
+150  
+150  
Total Power Dissipation  
Storage Temperature  
Junction Temperature  
Operating Ambient Temperature  
TA 25OC; Note 1  
PTOT  
TSTG  
TJ  
-
-55  
-
oC  
TAMB  
-55  
oC  
Note  
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.  
2. Measured at Pulse Width 300 us, Duty Cycle 2%.  
2003-8  

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