Datasheet > 2SB766_15

2SB766_15

更新时间： 2024-09-25 01:23:59

品牌	Logo	应用领域
永而佳 - WINNERJOIN		/
页数	文件大小	规格书
1页	110K
描述
TRANSISTOR

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中文翻译

获取价格

数据手册

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2SB766_15 数据手册

RoHS

2SB766

SOT-89

1. ^BASE

2SB766 TRANSISTOR (PNP)

FEATURES

Power dissipation

2. ^COLLECTOR

3. ^EMITTER

P_CM:

500

mW (Tamb=25℃)

Collector current

I_CM:

-1

Collector-base voltage

V_(BR)CBO

-30

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-10µA, I_E=0

Ic=-2mA, I_B=0

MIN

-30

-25

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-10µA, I_C=0

µA

V_CB=-20V, I_E=0

-0.1

340

I_EBO

Emitter cut-off current

V_EB=-4V, I_C=0

h_FE(1)

_CE=-10V, I_C=-500mA

DC current gain

h_FE(2)

V_CE=-5V, I_C=-1A

V_CE(sat)

V_BE(sat)

f_T

-0.2

-0.85

200

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=-500mA, I_B=-50mA

-0.4

-1.2

MHz

V_CE=-10V, I_C=-50mA, f=200MHz

C_ob

Collector output capacitance

V_CB=-10V, I_E=0, f=1MHz

CLASSIFICATION OF h_FE(1)

Rank

WEJ ELECTRONIC CO.,LTD

Range

85-170

120-240

170-340

Marking

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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