Datasheet > 2SB766

2SB766

更新时间： 2023-12-06 20:01:53

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	562K
描述
双极型晶体管

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数据手册

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2SB766 数据手册

2SB766

SOT-89 Transistor(PNP)

1. ^BASE

SOT-89

2. ^COLLECTOR

3. ^EMITTER

4.6

4.4

1.6

1.4

1.8

1.4

2.6

4.25

2.4

3.75

Features

0.8

MIN

Large collector power dissipation P_C

Complementary to 2SD874

0.53

0.40

2x)

0.48

0.35

1.5

0.44

0.37

0.13

3.0

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Dimensions in inches and (millimeters)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-30

Units

-25

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-1

P_C

500

150

-55-150

T_J

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-30

-25

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-10μA, I_E=0

V_(BR)CEOI_C=-2mA, I_B=0

V_(BR)EBO

I_CBO

I_E=-10μA, I_C=0

V_CB=-20V, I_E=0

V_EB=-4V, I_C=0

-0.1

340

μA

Emitter cut-off current

I_EBO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=-10V, I_C=-500mA

V_CE=-5V, I_C=-1A

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=-500mA, I_B=-50mA

V_CE=-10V, I_C=-50mA, f=200MHz

V_CB=-10V, I_E=0, f=1MHz

-0.2

-0.85

200

-0.4

-1.2

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

85-170

120-240

170-340

Range

Marking

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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