Datasheet > 2SB736-BW2

2SB736-BW2

更新时间： 2024-10-27 01:00:59

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科信 - KEXIN		/
页数	文件大小	规格书
3页	1159K
描述
PNP Transistors

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获取价格

数据手册

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2SB736-BW2 数据手册

SMD Type

Transistors

PNP Transistors

2SB736

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High DC current gain hFE:200(TYP)

● Complimentary to 2SD780.

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-60

Unit

VCBO

VCEO

VEBO

-60

-5

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

-300

200

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I

Min

-60

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

VCBO

VCEO

VEBO

CBO

EBO

CB= - 50V , I

-0.1

Emitter cut-off current

^EB= -5V , IC=0

Collector-emitter saturation voltage (Note.1)

Base - emitter saturation voltage (Note.1)

Base - emitter voltage (Note.1)

CE(sat)

BE(sat)

=-300 mA, I

=-30mA

-0.35 -0.6

-1.2

C=-300 mA, I

^CE= -6V, I

= -10mA

= -50mA

= -300mA

-600 -660 -700

CE= -1 V, I

110

200

400

DC current gain

(Note.1)

hFE

CE= -2V, I

CB= -6V, I

^CE= -6V, I

Collector output capacitance

Transition frequency

= 0,f=1MHz

= 10mA

100

MHz

Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.

■ Classification of hfe(1)

Type

Range

Marking

2SB736-BW1

110-180

BW1

2SB736-BW2

135-220

BW2

2SB736-BW3

170-270

BW3

2SB736-BW4

200-320

BW4

2SB736-BW5

250-400

BW5

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