2SB717PTGP

更新时间： 2024-09-25 13:04:11

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
2页	117K
描述
Transistor,

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中文翻译

获取价格

技术参数
数据手册

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2SB717PTGP 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

2SB717PTGP 数据手册

CHENMKO ENTERPRISE CO.,LTD

2SB717PT

SURFACE MOUNT

PNP Silicon Power Transistor

VOLTAGE 12 Volts CURRENT 3 Ampere

FEATURE

* Small flat package. (SC-62/SOT-89)

* Peak pulse current : 10A

* Extremely low saturation voltage

* PC= 2.0 W

SC-62/SOT-89

* Extremely low equivalent On-resistance

CONSTRUCTION

4.6MAX.

1.7MAX.

1.6MAX.

0.4+0.05

* PNP Switching Transistor

+0.08

0.45-0.05

+0.08

0.40-0.05

1.50+0.1

1 Base

2 Collector ( Heat Sink )

3 Emitter

CIRCUIT

Dimensions in millimeters

SC-62/SOT-89

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

CONDITION

Open Emitter

SYMBOL

VCBO

2SB717PT

UNITS

Volts

Collector - Base Voltage

-12

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current DC

Peak Collector Current

Base Current

Open Base

VCEO

VEBO

-12

-5

Volts

Amps

^oC

Open Collector

-3

Note 1

ICM

-10

-0.5

Total Power Dissipation

Storage Temperature

Junction Temperature

Operating Ambient Temperature

TA ≤ 25^OC; Note 2

PTOT

TSTG

2000

-55 to +150

^oC

TAMB

^oC

2007-04

Note

1. Measured under pulsed conditions. Pulse width=300uS. Duty cycle=2%

2. Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and

using comparable measurement methods adopted by other suppliers.

中文翻译

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