Transistor
2SB0710, 2SB0710A (2SB710, 2SB710A)
Silicon PNP epitaxial planer type
For general amplification
Unit: mm
Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A)
2.8 +–00..32
1.5 +–00..0255
Features
Large collector current IC.
I
G
0.65 0.15
0.65 0.15
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
2
3
Absolute Maximum Ratings (Ta=25˚C)
I
Parameter
2SB0710
Symbol
Ratings
–30
Unit
Collector to
VCBO
V
base voltage
Collector to
2SB0710A
2SB0710
2SB0710A
–60
0.1 to 0.3
0.4 0.2
–25
VCEO
V
emitter voltage
–50
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
–5
V
A
–1
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
– 0.5
200
A
Collector power dissipation
Junction temperature
Storage temperature
PC
mW
˚C
˚C
Tj
150
(2SB0710)
Marking symbol : C
(2SB0710A)
Tstg
–55 ~ +150
D
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector cutoff current
VCB = –20V, IE = 0
–0.1
µA
Collector to base
voltage
2SB0710
2SB0710A
–30
–60
–25
–50
–5
VCBO
IC = –10µA, IE = 0
V
Collector to emitter 2SB0710
VCEO
VEBO
IC = –10mA, IB = 0
V
V
voltage
2SB0710A
Emitter to base voltage
IE = –10µA, IC = 0
*1
hFE1
hFE2
VCE = –10V, IC = –150mA*2
VCE = –10V, IC = –500mA*2
IC = –300mA, IB = –30mA*2
IC = –300mA, IB = –30mA*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
85
340
Forward current transfer ratio
40
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
– 0.35
– 0.6
–1.5
V
V
–1.1
200
6
Transition frequency
fT
MHz
Collector output capacitance
Cob
15
pF
*2 Pulse measurement
*1
h
Rank classification
FE1
Rank
hFE1
Q
R
S
85 ~ 170
CQ
120 ~ 240
CR
170 ~ 340
CS
2SB0710
Marking
Symbol
Note.) The Part numbers in the Parenthesis show
conventional part number.
2SB0710A
DQ
DR
DS
1