Datasheet > 2SB710A-R

2SB710A-R

更新时间： 2024-02-16 20:55:54

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1054K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB710A-R 数据手册

SMD Type

Transistors

PNP Transistors

2SB710A

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● Large collector current I

● Complimentary to 2SD602A.

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-60

Unit

VCBO

VCEO

VEBO

-50

-5

Collector Current - Continuous

Collector current - Pulse

Collector Power Dissipation

Junction Temperature

-500

-1

200

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -10 mA， I =0

= -100μA， I =0

CB= - 50V , I =0

EB= -5V , I =0

Min

-60

-50

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

-0.1

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-300 mA, I

=-30mA

-0.35 -0.6

C=-300 mA, I

-1.1

-1.5

340

CE= -10V, I

CB= -10V, I

^CE= -10V, I

= -150mA

= -500mA

DC current gain

hFE

Collector output capacitance

Transition frequency

= 0,f=1MHz

= 50mA,f=200MHz

200

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SB710A- Q

85-170

2SB710A- R

120-240

2SB710A- S

170-340

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