Datasheet > 2SB709A

2SB709A

更新时间： 2023-12-06 20:03:46

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	632K
描述
SOT-23

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数据手册

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2SB709A 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

2SB709A TRANSISTOR (PNP)

FEATURES

1. ^BASE

For general amplification

Complementary to 2SD601A

2. ^EMITTER

3. ^COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

-45

-7

Collector Current -Continuous

Collector Power Dissipation

-100

200

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

Min

-45

-7

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

V_(BR)CBO

I_C= -10 μA, I_E=0

V_(BR)CEOI_C= -2mA, I_B=0

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)EBO

I_E= -10 μA, I_C=0

I_CBO

I_CEO

V_CB= -20 V, I_E=0

V_CE= -10V, I_B=0

-0.1

μA

Collector cut-off current

-100

DC current gain

h_FE

V_CE= -10V,I_C= -2mA

160

460

-0.5

Collector-emitter saturation voltage

V_CE(sat)

I_C=-100 mA, I_B= -10mA

V_CE= -10V, I_C= -1mA

f=200MHz

Transition frequency

MHz

f_T

V_CB= -10V, I_E= 0

f=1MHz

Collector output capacitance

2.7

C_ob

CLASSIFICATION OF h_FE

Rank

210-340

290-460

Range

160-260

BQ1

Marking

BR1

BS1

www.jscj-elec.com

Rev. - 2.0

12 3 4

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