Datasheet > 2SB675

2SB675

更新时间： 2024-09-21 06:18:11

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	111K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB675 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB675

DESCRIPTION

·With TO-220C package

·DARLINGTON

·High DC current gain

·Low collector saturation voltage

·Complement to type 2SD635

APPLICATIONS

·High power switching applications

·Hammer drive,pulse motor drive applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Tc=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-60

UNIT

ꢀ

Open base

-60

Open collector

-5

-7

I_B

Base current

-0.2

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

T_j

150

-55~150

T_stg

ꢀ

12 3

中文翻译

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