Datasheet > 2SB649B(TO-126)

2SB649B(TO-126)

更新时间： 2024-09-26 14:46:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
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Transistor

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2SB649B(TO-126) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SB649B(TO-126) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

2SB649/2SB649A TRANSISTOR (PNP)

TO- 126

FEATURES

Low Frequency Power Amplifier Complementary Pair

with 2SD669/A

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Value

Unit

V_CBO

-180

V_CEO

2SB649

2SB649A

Emitter-Base Voltage

-120

-160

-5

V_EBO

I_C

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

-1.5

P_C

℃

T_J

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

Test conditions

I_C=-1mA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

-180

-120

-160

-5

I_C=-10mA,I_B=0

2SB649

Collector-emitter breakdown voltage

V_(BR)CEO

2SB649A

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)EBO

I_CBO

I_E=-1mA, I_C=0

V_CB=-160V,I_E=0

V_EB=-4V,I_C=0

µA

-10

I_EBO

-10

320

200

_CE=-5V,I_C=-150mA

2SB649

h_FE(1)

2SB649A

DC current gain

h_FE(2)

V_CE(sat)

V_BE

V_CE=-5V,I_C=-500mA

I_C=-500mA,I_B=-50mA

V_CE=-5V,I_C=-150mA

V_CB=-10V,I_E=0,f=1MHz

Collector-emitter saturation voltage

Base-emitter voltage

-1

-1.5

Transition frequency

MHz

f_T

140

Collector output capacitance

CLASSIFICATION OF h_FE(1)

Rank

C_ob

60-120

100-200

160-320

Range

2SB649

2SB649A

A,Jun,2011

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