Datasheet > 2SB649A(TO-251)

2SB649A(TO-251)

更新时间： 2024-11-27 17:00:47

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	248K
描述
160V,1.5A,General Purpose NPN Bipolar Transistor

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2SB649A(TO-251) 数据手册

Product Specification

Epitaxial Planar PNP Transistor

2SB649A

FEATURES



Low frequency power amplifier.

TO-251

TO-252

Ordering Information

Part Number

Package

Shipping

Marking Code

2SB649A

TO-251

80 pcs / Tube

B649A

2SB649A

TO-252

80 pcs / Tube or 2500 pcs / Tape & Reel

B649A

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

-180

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

-160

V_EBO

Collector Current

I_C

P_C

-1.5

1.0

Collector Power Dissipation

Junction and Storage temperature

℃

T_J,T_STG

-55 to +150

STM5035A

www.gmesemi.com

12 3 4 5

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