Datasheet > 2SB649

2SB649

更新时间： 2024-11-19 06:16:07

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
4页	84K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB649 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB649 2SB649A

DESCRIPTION

·With TO-126 package

·Complement to type 2SD669/669A

·High breakdown voltage V_CEO:-120/-160V

·High current -1.5A

·Low saturation voltage,excellent h_FElinearity

APPLICATIONS

·For low-frequency power

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-180

-120

-160

-5

UNIT

2SB649

2SB649A

2SB649

2SB649A

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Open collector

-1.5

-3

I_CM

T_a=25℃

T_C=25℃

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3 4

中文翻译

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与2SB649相关器件

型号	品牌	获取价格	描述	数据表
2SB649 2SB649A	UTC	获取价格	PNP
2SB649(TO-126C)	CJ	获取价格	Transistor
2SB649_09	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SB649_11	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SB649_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB649_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB649_A	UTC	获取价格	PNP
2SB649A	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SB649A	HITACHI	获取价格	Silicon PNP Epitaxial
2SB649A	TRSYS	获取价格	TO-126C Plastic-Encapsulated Transistors