SMD Type
Transistors
PNP Transistors
2SB624-HF
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
■ Features
3
● High DC current gain. hFE:200 TYP.(VCE=-1V,I
● Complimentary to 2SD596-HF.
C=-100mA)
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1
2
+0.1
+0.05
-0.01
0.95
-0.1
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
-30
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
-25
-5
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
-700
200
150
mA
P
C
mW
T
J
℃
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -100 μA, I =0
Ic= -1 mA, I =0
= -100μA, I
Min
-30
-25
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
=0
I
CBO
EBO
V
V
CB= -30 V , I
E
=0
-100
-100
-0.6
-1.2
-0.7
400
nA
V
Emitter cut-off current
I
EB= -5V , IC=0
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
Base - emitter voltage (Note.1)
V
CE(sat)
BE(sat)
I
I
C
=-700 mA, I
B
=-70mA
=-70mA
V
C=-700 mA, I
B
V
BE
V
V
V
V
V
CE= -6V, I
CE= -1V, I
CE=- 1V, I
CB= -6V, I
CE= -6V, I
C
C
C
= -10mA
= -100mA
= -700mA
-0.6
110
50
hFE(1)
DC current gain (Note.1)
hFE(2)
Collector output capacitance
Transition frequency
Cob
E= 0,f=1MHz
17
pF
f
T
C= -10mA
160
MHz
Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
■ Classification of hfe(1)
Type
Range
Marking
2SB624-BV1-HF
110-180
2SB624-BV2-HF
135-220
2SB624-BV3-HF
170-270
2SB624-BV4-HF
200-320
2SB624-BV5-HF
250-400
BV1
F
BV2
F
BV3
F
BV4
F
BV5
F
1
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