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2SB624-BV5 PDF预览

2SB624-BV5

更新时间: 2024-11-06 01:03:19
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描述
PNP Transistors

2SB624-BV5 数据手册

  
SMD Type  
Transistors  
PNP Transistors  
2SB624  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
Features  
3
High DC current gain. hFE:200 TYP.(VCE=-1V,I  
Complimentary to 2SD596.  
C=-100mA)  
1
2
+0.1  
-0.1  
+0.05  
-0.01  
0.95  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
-30  
Unit  
V
VCBO  
VCEO  
VEBO  
-25  
-5  
Collector Current - Continuous  
Collector Power Dissipation  
Junction Temperature  
I
C
-700  
200  
150  
mA  
P
C
mW  
T
J
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Ic= -100 μAI =0  
Ic= -1 mAI =0  
= -100μAI  
Min  
-30  
-25  
-5  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
VCBO  
VCEO  
VEBO  
E
B
I
E
C
=0  
I
CBO  
EBO  
V
V
CB= -30 V , I  
E
=0  
-100  
-100  
-0.6  
-1.2  
-0.7  
400  
nA  
V
Emitter cut-off current  
I
EB= -5V , IC=0  
Collector-emitter saturation voltage (Note.1)  
Base - emitter saturation voltage (Note.1)  
Base - emitter voltage (Note.1)  
V
CE(sat)  
BE(sat)  
I
I
C
=-700 mA, I  
B
=-70mA  
=-70mA  
V
C=-700 mA, I  
B
V
BE  
V
V
V
V
V
CE= -6V, I  
CE= -1V, I  
CE=- 1V, I  
CB= -6V, I  
CE= -6V, I  
C
C
C
= -10mA  
= -100mA  
= -700mA  
-0.6  
110  
50  
hFE(1)  
DC current gain (Note.1)  
hFE(2)  
Collector output capacitance  
Transition frequency  
Cob  
E= 0,f=1MHz  
17  
pF  
f
T
C= -10mA  
160  
MHz  
Note.1:Pulse test : Pulse width 350μs,Duty Cycle2%.  
Classification of hfe(1)  
Type  
Range  
Marking  
2SB624-BV1  
110-180  
BV1  
2SB624-BV2  
135-220  
BV2  
2SB624-BV3  
170-270  
BV3  
2SB624-BV4 2SB624-BV5  
200-320  
BV4  
250-400  
BV5  
1
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