Datasheet > 2SB5350SQ

2SB5350SQ

更新时间： 2024-11-02 14:55:27

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	252K
描述
功率三极管

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数据手册

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2SB5350SQ 数据手册

2SB5350SQ-HAF

PNP Silicon Epitaxial Planar Transistor

Features

• Low V_CE(sat)

• Fast switching speed

• Halogen and Antimony Free(HAF), RoHS compliant

Applications

1.Base 2.Collector 3.Emitter 4. Collector

SOT-223 Plastic Package

• For switching and amplifier applications

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulesd

Power Dissipation

-I_CM

P_tot

℃

Operating Junction and Storage Temperature Range

T_j,T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

125

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

℃/W

1 / 5

Dated: 28/04/2022 Rev: 01

12 3 4 5

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