Datasheet > 2SB435

2SB435

更新时间： 2024-09-14 22:35:55

品牌	Logo	应用领域
永盛 - Wing Shing		晶体放大器晶体管功率放大器局域网
页数	文件大小	规格书
1页	72K
描述
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

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数据手册

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2SB435 数据手册

2SB435

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER

TO-220

Complement to 2SD235

ABSOLUTE MAXIMUM RATINGS (T_A=25℃)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current (DC)

Collector Dissipation (Tc=25℃)

Junction Temperature

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

P^C

T^j

-50

-40

-5

-3

℃

150

-50~150

Tstg

Storage Temperature

ELECTRICAL CHARACTERISTICS (T_A=25℃)

Characteristic

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

Test Condition

Min

Typ

Max

Unit

I^CBO

I^EBO

h^FE1

V^CE(sat)

f^T

V^CB= -50V , I^E=0

V^EB= -5V , I^C=0

V^CE= -5V , I^C=-0.5A

-10

240

-1.0

µA

Collector- Emitter Saturation Voltage

Current Gain Bandwidth Product

I^C=-3A ,

I^B=-0.3A

MHZ

V^CE= -2V , I^C=-0.5A

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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