2SB434Y

更新时间： 2024-09-15 13:01:03

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	47K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB434Y 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB434

DESCRIPTION

·With TO-220 package

·Complement to type 2SD234

APPLICATIONS

·For low frequency power amplifier

and switching applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220) and symbol

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

-60

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

-50

Open collector

-6

-3

1.5

P_C

Collector power dissipation

T_C=25℃

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

中文翻译

下载PDF

与2SB434Y相关器件

型号	品牌	获取价格	描述	数据表
2SB435	TOSHIBA	获取价格	SILICON PNP TRANSISTOR
2SB435	Wing Shing	获取价格	PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SB435	MICRO-ELECTRONICS	获取价格	Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB435G	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 3A I(C) \| TO-220AB
2SB449	ISC	获取价格	Silicon PNP Power Transistors
2SB449	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB468	ETC	获取价格	GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER
2SB471	ETC	获取价格	GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT
2SB472	ETC	获取价格	GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT
2SB476	ETC	获取价格	GE PNP ALLOY JUNCTION